1 features ? ezbright led rf performance C 460 & 470 nm ? ez-18? - 18 mw min. (470 nm only) ? ez-21? - 21 mw min. C 527 nm - ez-08? - 8.0 mw min. ? lambertian radiation ? conductive-epoxy or eutectic die attach ? low forward voltage - 3.2 v typical at 20 ma applications ? lcd backlighting C mobile appliances C monitors ? led video displays ? audio product display lighting ? automotive cree ? ez290? gen ii leds data sheet c xxx ez290-s xx 00-2 crees ezbright ? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez290-sxx00-2 chip diagram d a t a s h e e t : c p r 3 e j , r e v - top view bottom view side view 280 x 280 m cathode (-) 100-m dia. mesa (junction) 226 x 226 m anode (+) 280 x 280 m thickness 170 m subject to change without notice. www.cree.com
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and ezbright are registered trademarks, and ez, ez290, ez-08, ez-18 and ez-21 are trademarks of cree, inc. 2 cpr3ej rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1&3 c xxx ez290-s xx 00-2 dc forward current 50 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c460ez290-s xx 00-2 2.7 3.1 3.7 2 21 c470ez290-s xx 00-2 2.7 3.1 3.7 2 22 c527ez290-s xx 00-2 2.9 3.2 3.9 2 35 mechanical specifcations c xxx ez290-s xx 00-2 description dimension tolerance p-n junction area (m) 226 x 226 25 top area (m) 280 x 280 25 bottom area (m) 280 x 280 25 chip thickness (m) 170 25 au bond pad diameter (m) 100 -15, +5 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 280 x 280 25 back contact metal thickness (m) note 4 3.0 0.3 notes: 1. maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (<5 seconds). see cree ezbright applications note for assembly process information. 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil-std-883e. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance e. 4. specifcations are subject to change without notice.
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and ezbright are registered trademarks, and ez, ez290, ez-08, ez-18 and ez-21 are trademarks of cree, inc. 3 cpr3ej rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez290-s xx 00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (cxxxez290-sxxxx-2) orders may be flled with any or all bins (cxxxez290-xxxx-2) contained in the kit. all radiant fux and dominant wavelength values shown are specifed at if = 20 ma. ez-08 c527ez290-s0800-2 c527ez290-0210-2 c527ez290-0211-2 c527ez290-0212-2 c527ez290-0207-2 c527ez290-0208-2 c527ez290-0209-2 c527ez290-0204-2 c527ez290-0205-2 c527ez290-0206-2 c527ez290-0201-2 c527ez290-0202-2 c527ez290-0203-2 520 nm 525 nm 530 nm 535 nm 14.0 mw 12.0 mw 10.0 mw 8.0 mw dominant wavelength radiant flux ez-21 c460ez290-s2100-2 c460ez290-0213-2 c460ez290-0214-2 c460ez290-0215-2 c460ez290-0216-2 c460ez290-0209-2 c460ez290-0210-2 c460ez290-0211-2 c460ez290-0212-2 c460ez290-0205-2 c460ez290-0206-2 c460ez290-0207-2 c460ez290-0208-2 27.0 mw 24.0 mw 21.0 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm ez-18 c470ez290-s1800-2 c470ez290-0213-2 c470ez290-0214-2 c470ez290-0215-2 c470ez290-0216-2 c470ez290-0209-2 c470ez290-0210-2 c470ez290-0211-2 c470ez290-0212-2 c470ez290-0205-2 c470ez290-0206-2 c470ez290-0207-2 c470ez290-0208-2 c470ez290-0201-2 c470ez290-0202-2 c470ez290-0203-2 c470ez290-0204-2 27.0 mw 24.0 mw 21.0 mw 18.0 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and ezbright are registered trademarks, and ez, ez290, ez-08, ez-18 and ez-21 are trademarks of cree, inc. 4 cpr3ej rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ezbright led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 0 5 10 15 20 25 30 35 40 45 50 relative intensity if (ma) relative intensity vs. forward current - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 dw shift (nm) if (ma) wavelength shift vs. forward current 0% 50% 100% 150% 200% 250% 0 5 10 15 20 25 30 35 40 45 50 relative intensity if (ma) relative intensity vs. forward current - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 dw shift (nm) if (ma) wavelength shift vs. forward current 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 if (ma) vf (v) forward current vs. forward voltage 0% 20% 40% 60% 80% 100% 120% 320 420 520 620 relative intensity (%) wavelength (nm) relative intensity vs peak wavelength 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 if (ma) vf (v) forward current vs. forward voltage 0% 20% 40% 60% 80% 100% 120% 320 420 520 620 relative intensity (%) wavelength (nm) relative intensity vs peak wavelength
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and ezbright are registered trademarks, and ez, ez290, ez-08, ez-18 and ez-21 are trademarks of cree, inc. 5 cpr3ej rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright led product. actual patterns will vary slightly for each chip. c p r 3 c q r e v . - ? 2 0 0 6 c r e e , i n c . a ll r ig h ts r e s e r v e d e z b r i g h t ? ? ? ? t e c h n o l o g y e z b r i g h t 2 9 0 ? ? ? ? l e d s c x x x e z 2 9 0 - s x x 0 0 r a d i a t i o n p a t t e r n : t h is is a r e p r e s e n ta tiv e r a d ia tio n p a tte r n f o r th e e z b r ig h t? l e d p r o d u c t. a c tu a l p a tte r n s w ill v a r y s lig h tly f o r e a c h c h ip .
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